Pressure and volume dependence of the LO-TO phonons in InAs.
01 January 1984
The pressure dependence of the LO-TO phonons in InAs has been investigated by Raman scattering using the diamond anvil cell. Indium arsenide transforms, presumably to the rock-salt structure at 70 +- 1 kbar. The mode Gruneisen parameters for the LO- TO phonons are found to be gammaLO = 0.99 +- 0.03, gammaTO = 1.2 +- 0.03, respectively. The effective charge e(T)(*) for InAs decreases slightly with pressure, and this trend is in accordance with the behavior of other III-V zincblende structured semiconductors.