Pressure-Induced Resonance Raman Scattering in InGaAs/AlGaAs Quantum Wells
21 April 1989
Hydrostatic pressure has been used to tune in resonance Raman scattering in III-V semiconductor quantum wells, at a fixed laser excitation frequency omega sun L. Both first and second order Raman scattering is observed under these conditions and their resonance curves have been obtained. These resonances peak at different pressures for the two processes. The results will be presented and discussed.