Principles and Applications of Metalorganic Chemical Vapor Deposition for the Growth of III-V Compounds on Si Substrate.
07 April 1988
The use of the metalorganic chemical vapor deposition thin film materials technology in the heteroepitaxial growth of GaAs on Si substrates is of increasing interest for a wide variety of applications. This paper will describe the principles and applications of this materials technology and discuss possible future approaches to the growth of high-quality III-V heteroepitaxial layers on Si substrates.