Process Optimization of Chemically Amplified Resists Images Using Direct and SCALPEL E-beam Exposure

Direct write e-beam lithography in chemically amplified resists is capable of very high resolution (40 nm), however, the throughput of direct write approaches have limited their use to the manufacture of masks and other low throughput applications. SCALPEL combines the high resolution capability of e-beam lithography with the high throughput characteristics of a projection system and is now a viable candidate for imaging sub-130 nm features on wafers. In order to meet the stringent requirements for Next Generation Lithography (NGL), a SCALPEL imaging approach must include resists capable of printing sub-130 nm features with high sensitivity, high resolution, broad process latitude and low line edge roughness.