Processing techniques for InGaAs/InAlAs/InGaAs spin field effect transistors

Wet etch processing techniques For InGaAs/Inal/As/InGaAs transistors are used to Fabricate an N-channel HEMT (High Electron Mobility Transistor) with Fe contacts. These processing techniques can easily be extended for dilute magnetic semiconductor regrowth and for testing of various spin injection geometries. (C) 2000 Elsevier Science Ltd, All rights reserved,