Proton implanted stripe geometry (Al,Ga)As lasers using SiO (2) masking.

Gain guided, proton bombarded, stripe gemometry (Al,Ga)As lasers have been fabricated using a thick SiO(2) proton implant mask. The plasma deposited SiO(2) was anisotropically plasma etched to yield vertical walled stripes which acted as the high resolution implant mask. Stripe width is determined solely by photolithography, consequently strict tolerances can be maintained for optimum laser performance yields. A typical SiO(2) proton mask was 2.5 micron thick and 4.5 micron wide.