Pseudo-quaternary GaInAsP semiconductors: A new Ga0.47In0. 53As/InP graded gap superlattice and its applications to avalanche photodiodes.
01 January 1984
We have demonstrated for the first timer a pseudo-quaternary GaInAsP semiconductor consisting of a graded gap Ga0.47In0. 53As/InP superlattice. The average composition and the band gap of this structure is spatially varied by gradually changing the thicknesses of the InP and Ga0.47In0.53As layers between 5 and 55angstroms while keeping constant the period of the superlattice (=60angstroms).