Pt/Ti/n-InP Nonalloyed Ohmic Contacts Formed by Rapid Thermal Processing.
01 January 1990
Low resistance nonalloyed ohmic contacts of E-gun evaporated Pt/Ti to S doped n-Inp 5 x 10 sup (17), 1 x 10 sup (18) and 5 x 10 sup (18) cm sup (-3) have been fabricated by rapid thermal processing. The contacts to the lower doped substrates 5 x 10 sup (17) and 1 x 10 sup (18) cm sup (-3) were rectifying as deposited as well as after heat treatment at temperatures lower than 35C. Higher processing temperatures stimulated the Schottky to ohmic contact conversion with minimum contact resistance of 1.5 x 10 sup (-5) and 5 x 10 sup (-6) OMEGA (CM sup (2), respectively, as a result of rapid thermal processing at 450C for 30 sec. Heating at temperature of 550C yielded again a Schottky contact. The contact to the 5 x 10 sup (18) cm sup (-3) InP was ohmic as deposited with a specific contact resistance value of 1.1 x 10 sup (-4) OMEGA (CM sup) 2.