Pulse Profiling for AlGaN/GaN HEMTs Large Signal Characterizations

This paper deals with pulsed LSNA measurements of high power AlGaN/GaN transistors performed in a multi-harmonic passive load-pull environment. Time domain waveforms are acquired during a 150 ns window. This measurement window is moved across the 20 mus duration of pulses, the period is 1 ms. Phase and gain drifts of transistor characteristics versus time during the pulses are obtained and discussed.