Reduction of the Threshold Current Density of 2.2microns GaInAsSb/ AlGaAsSb Injection Lasers.
01 January 1986
GaInAsSb/AlGaAsSb injection lasers have been fabricated with increased Al concentration in the cladding layers. As a result of improved optical and electrical confinement, the threshold current density J(th) for these double heterostructures was a factor of 2 lower than reported previously; cw operation was achieved up to 235K.