Room temperature operation of Ga sub (0.47) In sub (0.53) As/Al sub (0.48) In sub (0.52) As: Resonant tunneling diodes.

The first room temperature operation of Ga sub (0.47) In sub (0.53) As/Al (0.48) In sub (0.52) As resonant tunnelling (RT) diodes is reported. The peak-to-valley ratio of the current is as high as 4:1 at room temperature and 15:1 at 80K. These are the highest values of peak- to-valley ratios at the respective temperatures, reported so far, in RT diodes. The position of the peak in the current-voltage characteristic also showed good agreement with that obtained from an electron tunnelling transmission calculation.