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    Room Temperature Operation of InGaAsSb/AlGaSb Double Heterostructure Laser Near 2.2microns Prepared by Molecular Beam Epitaxy.

Room Temperature Operation of InGaAsSb/AlGaSb Double Heterostructure Laser Near 2.2microns Prepared by Molecular Beam Epitaxy.

01 January 1986

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In(0.16)Ga(0.84)As(0.15)Sb(0.85)/Al(0.35)Ga(0.65)Sb double heterostructure injection lasers have been grown by molecular beam epitaxy on (100) GaSb substrates. Room temperature operation near 2.2microns wavelength has been achieved under pulsed conditions. Low pulsed threshold current density of 4.2 KA/cm(2) and a characteristic temperature of T(0) ~ 26 K have been obtained.