Shallow junctions by out-diffusion from BF sub 2 implanted polysilicon.

We describe, in separate sections, contact resistance, reverse bias diode leakage and physical analysis (SIMS and TEM) data from shallow P sup + /n junctions made by implanting various doses of BF sub 2 into polysilicon and outdiffusing, at various temperature/time conditions, into the underlying 100> Si. The polysilicon is cobalt disilicided to provide for subsequent metallization consisting of selective electroless plated cobalt/sputtered aluminum.