SI-MMIC BICMOS Low-Noise High-Linearity Amplifiers For Base Station Applications
01 January 2000
Low-noise, high-linearity amplifier chip sets designed for GSM 900 and DCS 1800 base station receivers are reported. The chip sets consisting of LNA and driver amplifier pairs, were fabricated using a 0.25microns silicon BiCMOS process. Noise figures of 1.35 dB and 1.85 dB were achieved for LNA's at 900 MHz and 1800 MHz, respectively, with corresponding gain values of 13 dB and 11 dB. Driver amplifiers with similar gain values achieved IIP3's greater than 10 dBm, with noise figures under 2.1 dB.