Si-on-SiO(2) structures by lamp annealing of oxygen implanted Si.
01 January 1987
Silicon-on-insulator (SOI) structures are formed by high dose oxygen implantation. Properties of the resulting Si films and the buried SiO(2) have been investigated as a function of post-implantation annealing at 1405C. It is shown that uniform, crystalline Si films can be formed over the synthesized buried oxide, with atomically abrupt Si/SiO(2) interfaces. The remaining defects are mainly threading dislocations in the Si film and polyhedral Si precipitates inside the SiO(2), near the oxide/substrate interface. Chemical segregation of oxygen into the SiO(2) permits the formation of continuous oxide films with implanted oxygen doses as low 6x10(17) cm (-2), as compared to the stoichiometric value of 1.4x10(18) cm(-2).