Silicon Based Heterostructures Grown by Rapid Thermal Chemical Vapor Deposition

Rapid thermal chemical vapor deposition (RTCVD) is a file growth technique resulting from the combination of rapid thermal annealing lamps and a chemical vapor deposition chamber. This apparatus is the ultimate cold-wall CVD reactor, since only the semiconductor substrate, which is its own susceptor, gets significantly hot through absorption of the infrared radiation of the external lamps. Due to its low thermal mass, the substrates' temperature can be raised (~200C/sec heating rates) and (= 200C/sec, depending upon its temperature) very quickly, and also held at a given temperature for short periods of time (seconds). Hence, very thin films can be grown.