Silicon Tetrachloride as an n-Type Dopant Source in a Multi- Frit Halide Vapor Phase Epitaxial System
01 January 1989
A common n-type dopant source in Halide Vapor Phase Epitaxy is Hydrogen Sulfide. This dopant source has been used successfully for GaAs and InP materials. However, memory effects can be evident when growing some heterostructures. We have investigated the use of Silicon Tetrachloride diluted in Phosphorus Trichloride as an alternate n-type dopant source in a Multi-frit Halide Vapor Phase Epitaxial System. The growth of n-type InP shows extreme sensitivity to the excess HC1 generated by this dopant source. This effects active carrier concentration and morphology. The conditions for the growth of high quality n-type Silicon doped InP will be discussed.