SIMS analysis of ion implantation profiles of boron difluoride in photoresist.

Photoresist is an essential material in semiconductor processing and is routinely used as an ion implantation mask. However, SIMS depth profiles in photoresist to determine ion implant range characteristics have been avoided because of the insulating and outgassing properties of the material. Ion implantation of boron difluoride into patterned resist results in a skin of carbon-rich, hardened resist that withstands etching. SIMS depth profiles have provided the projected range of BF sub 2 implants in HPR206 photoresist. The profiles obtained can be related to the properties of the carbonized photoresist.