SIMS Quantitative Analysis of Alkalis in Insulators

The ability to obtain concentration depth profiles of alkali elements in insulators at sputter rates greater than 1.0 nm/s has been achieved with the use of a neutralizing electron beam and without the use of a conducting overlayer. The problem of alkali ion mobility during analysis was overcome by optimization of the parameters which affect charge neutralization. Location of the electron beam with respect to the 02 primary beam is critical. The electron to ion current density ratio required varies for different matrices.