Simulation of Microposit 2400-17 resist profiles for 0.5 microns Photolithography at 248 nm.

Model parameters have been measured to characterize the exposure and development of Microposit 2400 resist exposed by a new deep UV wafer stepper at 248 nm. Resist profiles are obtained from the model for equal line/space patterns. The observed non-vertical wall profiles are correctly predicted by the simulation. These profiles result from the strong absorption of the resist and lack of photobleaching at 248 nm.