SIPOS-humidity interactions.
16 June 1986
High oxygen content (35 atomic % oxygen) SIPOS films were found to react with water vapor. Films which were exposed to 85C/85% relative humidity appeared to have more SiO2 character than those films not exposed. Also films treated at 85C/85% relative humidity prior to 800 or 900C nitrogen anneal appeared to have more SiO2 character than those films which did not see the 85C/85% relative humidity treatment prior to the anneal. These results show that the properties of SIPOS films can be significantly altered when they are exposed to a humid ambient before they are annealed at high temperatures. An 800C or 900C anneal stabilizes the SIPOS film so that no changes are observed after an 85C/85% relative humidity treatment.