Six-wavelength Raman fibre laser for C- and L-band Raman amplification and dynamic gain flattening

There should be good prospects for further increased wavelength and/or inproved LI characteristics. Using special MOVPW or molecular-beam epitaxy growth conditions. InGaAs QWs with PL emission wavelength of up to 1225 nm have been demonstrated {[}5.11]. The incorporation of such QWs in thepresent VCL structures should be expected to increase output power, reduce threshold current, and, dure to a temperature-dependent gain shift of 0.46 nm/K {[}7], also shift the minimum in threshold current towards room temperature, thus spproaching standard VCL tuning.