Smooth and Vertical-sidewall InP Etching Using Cl2/N2 Inductively Coupled Plasma

Inductively-coupled plasma operated in the reactive-ion etching mode (ICP-RIE) is used for mesa etching of InP using CL2/N2 chemistry with a Ni metal mask. Etch rate of approximately 140nm/min with very smooth and vertical sidewalls is obtained at a DC bias of 120V. The effects of temperature, gas flow, chamber pressure, ICP source power and substrate bias power on etch rate; sidewall profile and surface morphology will be discussed.