Some Circuit Properties and Applications of n-p-n Transistors

Almost two years ago, W. Shockley 1,2 first published the theory of a transistor made from a single piece of germanium in which the conductivity type varies in such a way as to produce two rectifying junctions. Since that time, M. Sparks, G. K. Teal and others at the Bell Telephone Laboratories 3 4 have contributed notably to the physical realization of this device. Recently Sparks has produced a number of n-p-n transistors and has found their behavior to be closely in accord with Shockley's theory.4 Preliminary circuit studies on these devices have shown that in several respects their performance is remarkable. In view of this, our transistor development group has undertaken to produce small quantities of n-p-n transistors in a form suitable for incorporation in working circuits. This paper will deal principally with the circuit aspects of the n-p-n transistor by presenting and analyzing performance data on a small number of experimental units. For a discussion of the solid state physics of its design and operation the reader is referred to the previously mentioned works of Shockley, Sparks, and Teal. OUTSTANDING PROPERTIES