Some Results Concerning the Partial Differential Equations Describing the Flow of Holes and Electrons in Semiconductors

1174 1177 1180 1182 1183 1183 1185 1187 1188 1188 1189 1191 1198 1202 1202 1203 1203 1205 1210 1212 1213 T HIS paper is concerned with the system of relations describing the flow of holes and electrons in the interior of a homogeneous semiconductor subject to the assumption of constant temperature, electrical neutrality, and constant difference in concentrations of ionized donor and acceptor centers. These relations are: divfu = - * [ « + ! £ ] div |]n = [(R + 1174 a) (2)