Spectroscopy of excited states in In sub (0.53) Ga sub (0.47) As/InP single quantum wells grown by chemical beam epitaxy.

Photoluminescence excitation (PLE) spectra are reported for six single quantum wells with thicknesses between 130angstroms and 23angstroms grown on the same wafer by chemical beam epitaxy. The very strong, narrow line emission from these high-quality quantum wells enabled us to perform PLE with a lamp/monochromator combination as excitation source. All of the observed excitonic absorption peaks are assigned. Fits to the spectra suggest that the band offsets are Q sub e ~ 60% and Q sub n ~ 40% with masses m sub e = 0.041 m sub o, m sub (hh) = 0.465 m sub o and m sub (eh) =0.085 m sub o. Energy dependent corrections for m sub e due to conduction band nonparabolicities are essential for a good fit and yield gamma sub e = 3.3x10 sup (-15) cm sup 2 for the gamma sub e K sup 4 correction term in the energy dispersion.