Spin-On-Silicon Oxide (SOX): Deposition and Properties.

High Quality SiO sub 2 films are obtained by spin-coating wafers with a sol/gel of salicic acid either a 2, 3, or 4-carbon linear-aliphatic alcohol. Some properties of the deposited film depend upon the solvent: such as density, tensile stress, and infrared spectrum. However, Rutherford-back-scattering analysis indicates the O:Si ratio (2.00+-0.05) to be independent of the solvent. The infrared spectrum of the oxide exhibits Si-OSi absorption in the range 1070-1080 cm, sup (-1) depending on the curing temperature solvent system. (The weaker Si-OSi band is found at 804-810 cm sup (-1)). In addition, low temperature- cured (500C) films show Si-OH absorption. Films hot-plate baked at 150-350C are stable but not fully cured.