Strain Effects on the Optical and Electronic Properties InGaAs/InP Superlattices
24 June 1987
The relationship between lattice strain and electronic levels of In sub (x) Ga sub (1-x) As quantum wells intentionally lattice mismatched with respect to InP substrate has been investigated for the first time. This material system can be used as a prototype strained layer superlattice in which the sign of the in plane strain can be changed and the lattice matched composition provides a strain free reference point.