Strain-Relaxation of Si-Ge Structures Grown by Rapid Thermal Chemical Vapor Deposition (RTCVD)

Thin Si sub (1-x) Ge sub (x) films with x=0 to ~0.35 have been grown in an RTCVD apparatus. The RTCVD process combines conventional chemical vapor deposition with external tungsten-halogen lamps for rapid substrate heating. In this study SiH sub 2 Cl sub 2 and GeH sub 4 gases were used to deposit films in the temperature range of 600 to 850C on well oriented 4" Si(100) wafers. The lamp banks in our 15" diam. chamber are large compared to the wafer and should insure their even heating.