Strong carrier freezeout above 77K in tellurium-doped buried channel MOS transistors.

At temperatures T 30K for conventional dopants, freezeout of the equilibrium carrier density becomes severe in semiconductor devices, and uncompensated dopants are in a neutral charge state. A variety of new transient and new bulk static conductance effects due to strong freezeout arise and may provide the basis for novel device mechanisms. In this case, achieving freezeout at higher temperatures particularly T > 77K, would have practical advantages. Such higher freezeout temperatures would be expected if deeper energy level dopant species were used. We demonstrate here the freezeout of the buried channel MOS transistor at T > 77K, using tellurium as the dopant species.