Structural Characterization of GaInAs (P)/InP Quantum Well Structures Grown by Gas Source Molecular Beam Epitaxy

High-resolution X-ray diffraction, low-temperature photoluminescence and transmission electron microscopy have been used to study InGaAs(P)/InP multi-quantum well structures grown on (100) InP. The superlattices were prepared by the gas source MBE technique and were found to have excellent optical properties.