Threshold energies in the light emission characteristics of silicon MOS tunnel diodes
01 July 2001
Hot electron luminescence of MOS tunnel structures with sub-3 nm oxide layer on p-Si is experimentally studied. Radiation spectra are shown to exhibit thresholds whose positions depend on the initial energy E of injected electrons. Simultaneously, a threshold-like increase of the light intensity at a selected wavelength as a function of E is revealed, and attributed to the onset of different luminescence mechanisms. (C) 2001 Elsevier Science Ltd. All rights reserved.