Time dependent dielectric breakdown of 210angstrom oxides.

We present Time Dependent Dielectric Breakdown (TDDB) data on 210angstrom oxide films made with a 1.25micron CMOS process using large area test capacitors (0.3 sq-cm). Stress temperature was varied between 60 and 150C while the electric field stress was varied from near-operating conditions (2.7 MV/cm) to highly accelerated conditions (8 MV/cm). We have designed and constructed two large scale systems to age as many as 1000 Devices Under Test (DUTs) at one time for each system, in either wafer or package form. The data reported here were acquired from test capacitors in wafer form and approximately 14000 test capacitors have been aged. Time to failure data are analyzed with the aid of a statistical analysis of reliability tool, STAR, that is a UNIX(TM) system-based software package developed and supported by AT&T Bell Laboratories.