Topography of the Si(111) Surface During Silicon Molecular Beam Epitaxy.
01 January 1989
Topographical features of large areas of Si(111) surface are revealed by the use of epitaxial silicide growth and transmission electron microscopy. Growth modes of molecular beam epitaxy (MBE) at different temperatures and growth rates are clearly displayed. A change of step character from 112 bar> to 1 bar 1 bar 2> at the initial stage of MBE is observed. This is explained by the stabilities of the two types of steps in relation to the 7x7 structure.