Transmission Electron Microscopy of Epitaxial Silicides Grown by Ultra High Vacuum Deposition
01 January 1989
The silicides CoSi sub 2 and NiSi sub 2 are both metallic with the fcc flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers.