Tunable Stimulated Emission of Radiation in GaAs Doping Superlattices.
01 January 1989
Tunable, stimulated emission of radiation is achieved in Al sub x Ga sub (1-x) As/GaAs double heterostructures, in which the wave-quiding GaAs region consists of a delta-doped doping superlattice. The low-temperature emission energy is 45 meV below the bulk bandgap of GaAs for homogeneous optical excitation of the Fabry-Perot cavity. The emission energy is continuously tunable over more than 30angstroms by inhomogeneous excitation of the cavity.