Tunnel-diode memory

After an introduction dealing with general considerations on such diodes, and their use as memory elements, a theoretical description is given on the proposed configuration of a memory point operating on the principle of threshold logic. The design and construction of a memory and associated circuits are then discussed, together with results obtained. Such a memory has been working continuously for several months at a 10 Mc/s clock frequency, having a complete read-write cycle of 100 nanoseconds: this includes access time for reading and writing the memory matrix as well as for the associated circuits.