Two-dimensional electron gas in a Ga0.47In0.53As/InP heterojunction grown by chemical beam epitaxy.
01 January 1986
Shubnikov-de Haas, quantum Hall effect, and cyclotron resonance measurements revealed the existence of a high mobility, two- dimensional electron gas at the Ga0.47In0.53As/InP heterointerface grown by chemical beam epitaxy. Enhanced electron mobilities were as high as -130 X 10(3) cm(2)/Vs at 4.2K. A striking feature in the data which also indicates that the sample is of high quality is the large number of Shubnikov-de Haas oscillation periods observed. Oscillations were observable up to a Landau filling factor of around 50, corresponding to a Landau level index of 25.