Type-I to Type-II Conversion of Pseudomorphic GaAs on InP Dependent on Growth Direction

Recent predictions of band offsets assign a type-II offset for the GaAs-InP interface without inclusion of strain effects, with conduction and valence band-edge offsets approximately give by 0.3 eV and 0.2 eV respectively. It has been demonstrated recently that pseudomorphic GaAs grown on (100)-oriented InP also has a type-II interface sup 1, but with a conduction band offset reduced by the hydrostatic deformation potential in GaAs. The biaxial in a conduction band offset reduced by the hydrostatic deformation potential in GaAs.