Use of a rapid anneal to improve CaF2:Si(100) epitaxy.
01 January 1985
Post anneals of short duration at high temperature are shown to improve significantly the quality of CaF2 films on Si(100). An anneal at 1100C for 20 sec in an Ar ambient reduced chi (min), the ratio of backscattered 1.8 MeV (4)He(+) ions in the aligned to random direction, from .26 for an as-grown CaF2 film to .03 following the post-anneal. This is the best chi(min) yet reported for the CaF2:Si(100) system. The post- annealed films also show improved chemical, mechanical, and electrical properties.