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    Use of Oxynitride Dielectric To Maximise The Growth Rate of Selective Epitaxial Base Layer In a Self-Aligned Double-Polysilicon SiGe Bipolar Transistors

Use of Oxynitride Dielectric to Maximise the Growth Rate of Selective Epitaxial Base Layer in a Self-Aligned Double-Polysilicon SiGe Bipolar Transistors

24 September 2002

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