Very high-quality single and multiple GaAs quantum wells grown by chemical beam epitaxy.

GaAs/Al(x)Ga(1-x)As single and multiquantum well heterostructures were grown for the first time by chemical beam epitaxy. Studies using low-temperature photoluminescence and excitation spectroscopy techniques show that on the average these samples are similar in quality to similar structures from this laboratory grown by molecular beam epitaxy (MBE) and in some respects, superior to those grown by organo-metallic chemical vapor deposition (OM-CVD). The photoluminescent intensities observed from these CBE-grown samples are comparable to those observed from their counterparts grown by MBE or OM-CVD.