VGF Growth of Large Diameter, Highly Perfect III-V Compound Semiconductor Crystals
20 August 1989
The Vertical Gradient Freeze technique has been reported sup 1 to grow high quality, large diameter single crystals of GaP, InP and GaAs. The crystals are grown under low axial and radial temperature gradients in bottom seeded Pyrolytic Boron Nitride crucibles. The low levels of thermoelastic stress generated using this technique result in a 100-fold reduction in dislocation levels for all three of the above materials compared to LEC grown crystals.