Voltage Controlled Q-Switching of InGaAs/InP Single Quantum Well Lasers
01 January 1989
The light emission characteristics of high performance InGaAs/InP single quantum well laser diodes with a monolithically integrated intra-cavity loss modulator have been investigated. We demonstrate efficient voltage controlled tuning of the lasing threshold current over more than one order of magnitude. In addition, active Q-switching of 7 mW lasing light power with a change in electrical power of less than 30 microwatts is achieved.