0.25-mu m BiCMOS receivers for normal and micro GSM900 and DCS1800 base stations
01 January 2002
This paper describes two integrated RF receivers with low noise and high linearity for GSM900 and DCS1800 base stations. The chips were fabricated using a 0.25-mum BiCMOS process. This is the first silicon-integrated radio front-end that can be used to meet global system for mobile communications normal and micro base-station specifications reported to date. Noise figure, gain, and output infrared third-order intercept point are 2.1 dB, 25.8 dB, and 25.7 dBm for GSM900 and 3.3 dB, 21.3 dB, and 22.5 dBm for DCS1800, respectively.