~1.5micron InGaAsP ridge lasers grown by gas source molecular beam epitaxy.

Separate confinement heterostructure wafers grown by gas source molecular beam epitaxy have been used to prepare ridge waveguide lasers operating CW up to 50C. Laser threshold currents varied from 45 to 65 mA at room temperature and output powers up to 9 mW have been obtained with the external quantum efficiency of ~ 36%. Gain profile measurements indicate excellent material uniformity. Frequency response flat to at least 2GHz is consistent with the material free of interfacial traps or any capacitive shunt paths.