We have used the technique of surface EXAFS (SEXAFS) to study the structure of the Ni(110)c(2x2)S adsorption phase.
The valence-band discontinuity has been determined for the (100) InAs/GaSb system by x-ray photoemission core level spectroscopy. For 20A of InAs on GaSb we find that Ev = 0.53 eV.
In a gallium arsenide (GaAs) metal-semiconductor field effect transistor (MESFET), the properties of the active channel are fundamental in describing its operation.
A small quantum dot containing approximately 20 electrons is realized in a two-dimensional electron system of an AlxGa1-xAs/GaAs heterostructure.
The impact of the quality of transmission estimator margin on the prediction accuracy for a connection establishment in network planning is studied as a function of the knowledge of the actual chro
Thermal analysis was used to measure the liquidus temperature, T sub L, and determine the composition of tin/lead solders electrodeposited on an electronic component and plain metal substrates.
The room-temperature paramagnetic and 4.2 K Zeeman sup 57 Fe Mossbauer spectra are reported and analysed for both crystalline (c-) and amorphous (a-) NaFeF sub 4.
This paper discusses the way the minimum gap length of several ferrite magnetic reactors varies as the geometry of the core changes.
Previously, we investigated theoretically the charging of free standing dielectric thin films irradiated by 100 keV electrons and formulated kinetic equations describing the dynamic process [M.
In recent years there has been considerable interest in the modelling of speech production in terms of the motion of the articulators.
