We demonstrate direct modulation results on a 16-channel chirped multifrequency laser without a shared amplifier.
Recent progresses on hybrid InP/Si integration are presented for achieving high performance tunable transmitters for cost-sensitive wavelength division multiplexing (WDM) access networks.
Normally unoccupied adsorbate induced states within the GaAs band gap were studied by measuring ultraviolet photoemission spectra from pulsed laser-excited surfaces.
We have measured the alloy scattering of two-dimensionally (2D) confined electrons in AlxGa1-xAs in the dilute Al concentration limit.
By making transport measurements on InGaAs/InP superlattices we have been able to demonstrate a regime of rapid electron tunneling perpendicular to the layers in the presence of quantum hole locali
Atomic layer epitaxy (ALE) of GaAs using trimethylgallium (TMG) and triethylgallium (TEG) by chemical beam epitaxy (CBE) is reported.
A transmission electron microscope was used to study inclusions in cobalt-hardened gold electrodeposits.
Intra-ionic spin-orbit split multiplet levels have been observed by electronic Raman scattering in the intermediate valence compound EuPd2Si2.
Measurements of spontaneous emission from InGaAsP semiconductor optical amplifiers provide information on both the carrier density and temperature.
Neutron measurements show that superconducting ErNi2B2C (T-c = 11 K) develops anti ferromagnetic spin density wave magnetic order (T-N = 6 K), which squares up with decreasing temperature yielding
