With ever increasing operation speeds in digital systems the accuracy of electrical simulation in the design process becomes of greater importance.
Scanning capacitance microscopy (SCM) enables the imaging of the two-dimensional carrier profiles of small transistors.
Scanning capacitance microscopy (SCM) has enabled the imaging of two-dimensional doping profiles of very small transistors.
Fiber To The Home technology like G-PON [1], XG-PON1 [2] give the opportunity to consider CAPEX and OPEX reductions by decreasing the number of Central Offices (COs) because of systems optical perf
Electrical switching times in the three terminal double heterostructure opto-electronics switch are measured and analyzed for the device with a third contact to the active layer.
T HE installation and maintenance of the circuits in a telephone plant employed for the transmission of speech require the use of various testing schemes to insure a high grade of commercial servic
The study of nonlinear wave propagation along distributed electrical and mechanical transmission lines is important because these lines serve as useful models for nonlinear wave motion with dispers
The formation of TiSi sub 2 thin films on Si has been investigated by in-situ x-ray diffraction and by electrical transport.
We have created continuous buried layers ofCrSi sub 2 in silicon using high dose implantation of Cr sup + into (111)-oriented silicon followed by annealing (mesotaxy sup 1).
We have used mesotaxy, a technique which involves high dose implantation followed by high temperature annealing, to create thin (500A) layers of oriented single-crystal CoSi sub 2 buried beneath th
