Chip-On-Chip (COC) logic/memory integration alters the electrical characteristics of both IC components.
Carrier lifetimes as short as 270 fs with carrier mobility of 200 cm(2)/V/s and good performances in terms of layer resistivity have been obtained from ion-irradiated InGaAs.
The first part of the paper is theoretical and deals mainly with the treatment of an aerial as a dissipative transmission line and the statement of formulaelig whereby the radiation and driving imp
In order to build molecular scale mechanical or electronic devices it will be necessary to understand in atomic detail the general principles of molecular recognition and molecular self-assembly.
The issue of detection and migration of metal contamination during Si wafer processing is crucial for the perfection of 0.18microns manufacturing technology.
Iii transistor circuits designed for high-speed switching or computing operations, computer diodes may perform useful functions.
The subject of the Electrical Properties of Matter is so general and broad in scope that one reviewing it is immediately faced with the problem of what material to include and what to reject.
N-type CuGaSe2 single crystals are prepared using a co-doping technique with Ge and Zn. Employing this method electron concentrations in the range from 10(10) to 10(18) cm(-3) have been achieved.
Work on the electrical properties of thin-film, bulk ceramic and single-crystal YBa sub 2 Cu sub 3 O sub 7 and Bi sub 2 Sr sub 2 Ca sub 1 Cu sub 2 O sub 8 superconductors in the normal state above
We have studied the effect of visible and near-infrared light on the electrical properties of superconducting thin films of YBa sub 2 Cu sub 3 O sub (7-delta).
